CSD88537NDT
In stock
- CSD88537NDT Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
高度 | 1.75 mm |
Qg-栅极电荷 | 14 nC |
封装 | SO-8 |
Vds-漏源极击穿电压 | 60 V |
Pd-功率耗散 | 2.1 W |
Id-连续漏极电流 | 16 A |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 10 V |
电路数量 | 2 Channel |
Rds On-漏源导通电阻 | 15 mOhms |
长度 | 4.9 mm |
安装方式 | SMD/SMT |
宽度 | 3.9 mm |
Others include "CSD88537NDT" parts
The following parts include 'CSD88537NDT'
CSD88537NDT Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
CSD88537ND
TI
60-V Dual N-Channel NexFET Power MOSFET,
Learn More >
-
-
-
CSD88537ND
TI
60-V Dual N-Channel NexFET Power MOSFET,
Learn More >
-
-
-
CSD88537ND
TI
60-V Dual N-Channel NexFET Power MOSFET,
Learn More >
-
-
-
CSD88537NDT
TI
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SO
Learn More >
-
-
-
CSD88537NDT
TI
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SO
Learn More >
-
- View All Newest Products from Omron