TLV3401IDR
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Specification
Vos - 输入偏置电压 | 100 pA |
电路数量 | 1 Channel |
工作温度范围 | - 40 C~+ 125 C |
封装 | SOIC-8 |
电源电流 | 550 nA |
CMRR - 共模抑制比 | 88 dB |
比较器类型 | Nano Power Comparator |
电源电压 | 2.5 V~16 V |
高度 | 1.58 mm |
响应时间 | 80 us |
安装方式 | SMD/SMT |
输出类型 | Open Collector, Open Drain |
Ib - 输入偏流 | 100 pA |
长度 | 4.9 mm |
宽度 | 3.91 mm |
传播延迟时间 | 80 us |
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