The power semiconductor market is prepping for increased demand for silicon-carbide (SiC) and gallium-nitride (GaN) devices. The latest research from IHS Markit indicates that the SiC and GaN power semiconductor market will reach nearly $1 billion in 2020. The biggest demand drivers include hybrid and electric vehicles (HEVs/EVs), power supplies, and PV inverters as well as market penetration, particularly in China.
One of the biggest growth drivers will be the main powertrain inverter in hybrid and electric vehicles, where SiC MOSFETs should appear in the market in an estimated three to five years, according to IHS Markit.
Revenue for SiC substrates is expected to reach $180 million in 2018, according to TrendForce. Benefits of SiC include low on-resistance and low switching loss, making SiC key to improving automotive battery life. The market researcher also expects 5G to help drive the development of SiC and GaN third-generation semiconductor materials.
Power semiconductor makers are responding. Microsemi Corp., for example, recently introduced a low-inductance package for high-current, low-specific-on-resistance SiC MOSFET power modules, offering 2.9-nH stray inductance that enables high current, high switching frequency, and high efficiency.
Microsemi explained that it is expanding SiC solutions to provide a greater range of power discrete solutions in a marketplace that promises continued growth. “Our extremely low-stray-inductance standard SP6LI package is ideal for improving the performance of SiC MOSFETs for high-switching, high-current, and high-efficiency applications, offering a smaller power systems solution that can help customers significantly reduce their equipment needs,” said Leon Gross, Microsemi’s Discrete and Power Management business unit vice president and business unit manager. “These superior switching characteristics of our low-inductance package enable customers to develop higher performance and highly reliable systems to help differentiate them from the competition.”
The SP6LI power modules can be used in switch-mode power supplies and motor control in a variety of applications including industrial, automotive, medical, aerospace, and defense.
Partnerships are also driving the development of new SiC devices. In 2015, Littelfuse Inc., which offers circuit protection, partnered with Monolith Semiconductor Inc., a developer of silicon-carbide technology, to develop power semiconductors for industrial and automotive markets. Their latest offering includes two 1,200-V SiC n-channel, enhancement-mode MOSFETs.
Applications for the new SiC MOSFETS include EVs, industrial machinery, renewable energy, medical equipment, switch-mode power supplies, uninterruptible power supplies, motor drives, high-voltage DC/DC converters, and induction heating.
“These new SiC MOSFETs provide power converter designers with a state-of-the-art alternative to traditional silicon-based transistors,” said Michael Ketterer, product marketing manager for Power Semiconductors at Littelfuse, in a release. “Their inherent material characteristics and ultra-fast switching capabilities offer a variety of design optimization opportunities including increased power density, higher efficiency, and the potential for lower bill-of-material costs.”
In February, ON Semiconductor also extended its SiC portfolio to include a new family of 650-V SiC diodes with higher switching capabilities with lower power loss and easy device paralleling. ON Semi specifically calls attention to their usefulness for PV inverters, EV/HEV chargers, telecom power, and data center power supplies, which require higher efficiencies.
“Utilizing the unique characteristics of the wide-bandgap materials, SiC technology offers tangible benefits over silicon, and their robust construction provides a dependable solution in applications in challenging environments,” said Simon Keeton, ON Semiconductor’s senior vice president and general manager, MOSFET Business in a press release. “Our customers will benefit from simplified, better-performing, smaller footprint designs as a result of these new devices.”
Cree is making moves, too — kicking off the year with a supply agreement with Infineon, a licensing agreement with Nexperia, and the acquisition of the RF power business at Infineon. Knowmade and Yole Développement recently released a report that examines the company’s strategy in more depth, which likely reflects the greater goals of the market.
