BFP 740 H6327
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | Infineon |
RoHS | yes |
Transistor type | Bipolar |
Technology | SiGe |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 160 |
Collector - Emitter maximum voltage VCEO | 4 V |
Emitter-base voltage VEBO | 1.2 V |
Continuous collector current | 30 mA |
The maximum working temperature | + 150 C |
Configuration | Single Dual Emitter |
Installation style | SMD/SMT |
Package / case | SOT-343 |
Trademark | Infineon Technologies |
Minimum working temperature | - 65 C |
working frequency | 42 GHz |
Pd - Power Dissipation | 160 mW |
Series | BFP740 |
Factory packing quantity | 3000 |
Types | RF Silicon Germanium |
Part number aliases | BFP740 BFP740H6327XTSA1 SP000750414 |
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