FF650R17IE4
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Specification
Product | IGBT Silicon Modules |
Configuration | Dual |
Collector - Emitter maximum voltage VCEO | 1700 V |
Collector - emitter saturation voltage | 2.45 V |
Continuous collector current at 25 ° C | 930 A |
Gate-emitter leakage current | 400 nA |
Pd - Power Dissipation | 4.15 kW |
Package / case | PRIME2 |
The maximum working temperature | + 150 C |
Height | 38 mm |
Length | 172 mm |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 3 |
Width | 89 mm |
Unit weight | 825 g |
Others include "FF650R17IE4" parts
The following parts include 'FF650R17IE4'
- ffc & fpc connectors
- ffb34d0686k-
- ffv34e0107k-
- ff6-20-dc-0
- ffb0412vhn-r0
- ffb0412ghn delta fab
- ffb0412ghn+delta+fab
- ff6-10-ac-qd0
- ffa.0s.250.ctac2
- ffa.1s.275.ctac5
- ffa.0s.250.ctac2
- ffa.0s.302.clac2
- ffa.0s.302.clac2
- ff6-10-ac-0
- ff6-10-ac-0
- ff6-10-ac-qd-s
- ffa.0s.302.clac44
- ff6-21-ac-0
- ffa.1e.250.ctac5
- ff5-21-dc-1
FF650R17IE4 Releted Information
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