FP50R06W2E3
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Specification
Product | IGBT Silicon Modules |
Configuration | IGBT-Inverter |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 1.45 V |
Continuous collector current at 25 ° C | 65 A |
Gate-emitter leakage current | 400 nA |
Pd - Power Dissipation | 175 W |
Package / case | Module |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | SMD/SMT |
Unit weight | 39 g |
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