FS75R07W2E3_B11A
Manufacturer:
Mfr. Part #:
FS75R07W2E3_B11A
Allchips #:
R001-FS75R07W2E3_B11A-1-H-0000-X-Y
Description:
IGBT模块
Delivery:
Payment:
PayPal, Credit Card, Wire Transfer, Western Union
In stock
- FS75R07W2E3_B11A Details
- Packing And Shipping
- Payment Method
- Quality Control
Infineon,FS75R07W2E3_B11A is available at Allchips.100% original and new guarantee. If
comprehensive data for FS75R07W2E3_B11A to optimize the supply chain, including costdown, time-saving, cross
references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected,
please contact our professional team.
Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | 3-Phase |
Collector - Emitter maximum voltage VCEO | 650 V |
Collector - emitter saturation voltage | 1.7 V |
Continuous collector current at 25 ° C | 95 A |
Gate-emitter leakage current | 400 nA |
Pd - Power Dissipation | 275 W |
Package / case | EasyPack1B |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Through Hole |
Series | FS75R07W2 |
Factory packing quantity | 15 |
FS75R07W2E3_B11A Releted Information
- Hot sale
- Related Categories
- Popular Search