FS50R12KT3
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Specification
Product | IGBT Silicon Modules |
Configuration | Hex |
Collector - Emitter maximum voltage VCEO | 1200 V |
Continuous collector current at 25 ° C | 75 A |
Package / case | Econo 2 |
The maximum working temperature | + 125 C |
Height | 17 mm |
Length | 107.5 mm |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 10 |
Width | 45 mm |
Unit weight | 180 g |
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