FS50R12W2T4_B11
Manufacturer:
Mfr. Part #:
FS50R12W2T4_B11
Allchips #:
R001-FS50R12W2T4_B11-1-H-0000-X-Y
Description:
IGBT模块
Delivery:
Payment:
PayPal, Credit Card, Wire Transfer, Western Union
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Specification
Product | IGBT Silicon Modules |
Collector - Emitter maximum voltage VCEO | 1200 V |
Collector - emitter saturation voltage | 2.15 V |
Continuous collector current at 25 ° C | 83 A |
Gate-emitter leakage current | 100 nA |
Pd - Power Dissipation | 335 W |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Unit weight | 39 g |
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