IPB042N10N3GATMA1
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Specification
Vgs - 栅极-源极电压 | 3.5V @ 150uA |
Vds-漏源极击穿电压 | 100V |
安装方式 | 表面贴装型 |
工作温度范围 | -55°C~175°C(TJ) |
Id-连续漏极电流 | 100A(Tc) |
晶体管极性 | 分立半导体产品,晶体管-FET,MOSFET-单个 |
封装 | D²PAK(TO-263AB) |
Rds On-漏源导通电阻 | 4.2mΩ @ 50A,10V |
Pd-功率耗散 | 214W(Tc) |
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