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IRF6218PBF
Manufacturer:
Mfr. Part #:
IRF6218PBF
Allchips #:
R001-IRF6218PBF-1-H-1425+-X-Y
Description:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | Through Hole |
| Package / case | TO-220-3 |
| Number of channels | 1 Channel |
| Transistor polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | - 150 V |
| Id - continuous drain current | - 27 A |
| Rds On - Drain-Source On-Resistance | 150 mOhms |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 21 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 30 ns |
| Height | 15.65 mm |
| Length | 10 mm |
| Pd - Power Dissipation | 250 W |
| Rise Time | 70 ns |
| Factory packing quantity | 50 |
| Transistor type | 1 P-Channel |
| Types | Smps MOSFET |
| Typical shutdown delay time | 35 ns |
| Typical turn-on delay time | 21 ns |
| Width | 4.4 mm |
| Unit weight | 6 g |
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