IRF6668TRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DirectFET-MZ |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 80 V |
Id - continuous drain current | 55 A |
Rds On - Drain-Source On-Resistance | 12 mOhms |
Vgs th - gate-source threshold voltage | 4 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 22 nC |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 23 ns |
Forward transconductance - minimum | 22 S |
Height | 0.7 mm |
Length | 6.35 mm |
Pd - Power Dissipation | 2.8 W |
Rise Time | 13 ns |
Factory packing quantity | 4800 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 7.1 ns |
Typical turn-on delay time | 19 ns |
Width | 5.05 mm |
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