IRF640NSTRLPBF
In stock
- IRF640NSTRLPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 200 V |
Id - continuous drain current | 18 A |
Rds On - Drain-Source On-Resistance | 150 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 44.7 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 5.5 ns |
Forward transconductance - minimum | 6.8 S |
Height | 2.3 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 150 W |
Rise Time | 19 ns |
Factory packing quantity | 800 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 23 ns |
Typical turn-on delay time | 10 ns |
Width | 6.22 mm |
Unit weight | 2 g |
IRF640NSTRLPBF Documents
Download datasheets and manufacturer documentation for IRF640NSTRLPBF
Datasheets
Others include "IRF640NSTRLPBF" parts
The following parts include 'IRF640NSTRLPBF'
IRF640NSTRLPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRF640NSTRLPBF
Infineon
N沟道,220V,18A,150mΩ@10V
Learn More >
-
-
-
IRF640NSTRLPBF
Infineon
Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
IRF640NSTRLPBF
Infineon
N沟道,220V,18A,150mΩ@10V
Learn More >
-
-
-
IRF640NSTRLPBF
Infineon
Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
- View All Newest Products from Omron