IRF640NSTRRPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | D2PAK |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 200 V |
Id - continuous drain current | 18 A |
Rds On - Drain-Source On-Resistance | 150 mOhms |
Vgs th - gate-source threshold voltage | 2 V to 4 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 44.7 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 5.5 ns |
Forward transconductance - minimum | 6.8 S |
Height | 2.3 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 150 W |
Rise Time | 19 ns |
Transistor type | 1 N-Channel |
Types | HEXFET Power MOSFET |
Typical shutdown delay time | 23 ns |
Typical turn-on delay time | 10 ns |
Width | 6.22 mm |
Unit weight | 4 g |
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