IRGIB6B60KDPBF
Manufacturer:
Mfr. Part #:
IRGIB6B60KDPBF
Allchips #:
R001-IRGIB6B60KDPBF-1-H-1801-X-N
Description:
Trans IGBT Chip N-CH 600V 11A 38000mW 3-Pin(3+Tab) TO-220AB Full-Pak Tube
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-220-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 1.8 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 11 A |
Pd - Power Dissipation | 38 W |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Series | RC |
Gate-emitter leakage current | 100 nA |
Height | 16 mm |
Length | 10.6 mm |
Factory packing quantity | 50 |
Width | 4.8 mm |
Unit weight | 2.300 g |
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