TH58BVG2S3HBAI4
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Specification
工作电压 | 2.7 V~3.6 V |
存储器类型 | NAND |
接口类型 | Parallel |
工作温度范围 | - 40 C~+ 85 C |
速率 | 25 ns |
存储容量 | 4 Gbit |
封装 | TFBGA-63 |
安装方式 | SMD/SMT |
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