FDG6332C-F085
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Specification
晶体管极性 | MOSFET |
Id-连续漏极电流 | 700 mA |
Pd-功率耗散 | 300 mW |
封装 | SC-70-6 |
Vds-漏源极击穿电压 | 20 V |
Rds On-漏源导通电阻 | 300 mOhms, 420 mOhms |
Vgs - 栅极-源极电压 | 12 V |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
资格等级 | AEC-Q101 |
电路数量 | 2 Channel |
长度 | 2 mm |
宽度 | 1.25 mm |
Qg-栅极电荷 | 1.1 nC, 1.4 nC |
高度 | 1.1 mm |
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