FDMS86152
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Specification
Rds On-漏源导通电阻 | 6 mOhms |
封装 | PQFN-8(5x6) |
Qg-栅极电荷 | 36 nC |
高度 | 0.8 mm |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 20 V |
工作温度范围 | - 55 C~+ 150 C |
宽度 | 3.3 mm |
Vds-漏源极击穿电压 | 100 V |
长度 | 3.3 mm |
Pd-功率耗散 | 125 W |
Id-连续漏极电流 | 45 A |
晶体管极性 | MOSFET |
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