FGB20N60SF
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Specification
栅极/发射极最大电压 | 20 V |
Pd-功率耗散 | 208 W |
栅极阈值电压-VGE(th) | 20 V |
封装 | D2PAK |
安装方式 | SMD/SMT |
集电极电流Ic | 40 A |
工作温度范围 | -55°C~150°C(TJ) |
集电极—发射极最大电压 VCEO | 600 V |
Others include "FGB20N60SF" parts
The following parts include 'FGB20N60SF'
- fg18c0g1h6r8dnt0
- fg26c0g1h473jnt0
- fgg.2b.302.cycd6
- fg24c0g2w391jnt0
- fgg.2b.303.clad7
- fg28x7s2a683krt0
- fg20x7s2a475krt0
- fg28c0g1h821jnt0
- fgg.2b.310.clad42
- fg16x7r1h335krt0
- fg28c0g2a010cnt0
- fg26x7s2a335krt0
- fgh60n60
- fg18c0g1h101jnt0
- fgg.2b.319.cycd8
- fg18c0g1h562jnt0
- fgg.2b.319.clad7
- fg18c0g2a090dnt0
- fg18c0g1h151jnt0
- fg18c0g1h392jnt0
FGB20N60SF Releted Information
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FGB20N60SF
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Trans IGBT Chip N-CH 600V 40A 208W 3-Pin(2+Tab) D2PAK T/R
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FGB20N60SFD-F085
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