STB100N10F7
In stock
- STB100N10F7 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Id-连续漏极电流 | 80 A |
Vgs - 栅极-源极电压 | 20 V |
Rds On-漏源导通电阻 | 8 mOhms |
工作温度范围 | - 55 C~+ 175 C |
安装方式 | SMD/SMT |
封装 | TO-263-3 |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 100 V |
Qg-栅极电荷 | 61 nC |
Pd-功率耗散 | 150 W |
Others include "STB100N10F7" parts
The following parts include 'STB100N10F7'
STB100N10F7 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
STB100N10F7
ST Microelectronics
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
STB100N10F7
ST Microelectronics
表面贴装型 N 通道 100V 80A(Tc) 150W(Tc) D2PAK
Learn More >
-
- View All Newest Products from Omron