FQB19N20LTM
Manufacturer:
Mfr. Part #:
FQB19N20LTM
Allchips #:
R001-FQB19N20LTM-4-H-2432-X-N
Description:
Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R
ECAD Model:
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Specification
| 长度 | 10.67 mm |
| Vds-漏源极击穿电压 | 200 V |
| Pd-功率耗散 | 3.13 W |
| Id-连续漏极电流 | 21 A |
| 电路数量 | 1 Channel |
| 安装方式 | SMD/SMT |
| Vgs - 栅极-源极电压 | 20 V |
| 高度 | 4.83 mm |
| 封装 | TO-263-3 |
| 宽度 | 9.65 mm |
| 工作温度范围 | - 55 C~+ 150 C |
| 晶体管极性 | MOSFET |
| Rds On-漏源导通电阻 | 140 mOhms |
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