NCV8406ASTT3G
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Specification
封装 | SOT-223-3 |
资格等级 | AEC-Q101 |
晶体管极性 | MOSFET |
Pd-功率耗散 | 1.31 W |
Vds-漏源极击穿电压 | 65 V |
工作温度范围 | - 40 C~+ 150 C |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 7 A |
Rds On-漏源导通电阻 | 210 mOhms |
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Power Switch/Driver 1:1 N-Channel 7A SOT-223 (TO-261)
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