A2C25S12M3-F
Manufacturer:
Mfr. Part #:
A2C25S12M3-F
Allchips #:
R001-A2C25S12M3-F-14-H-1901-X-N
Description:
Trans IGBT Module N-CH 1200V 25A 197W 35-Pin ACEPACK-2 Tray
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Specification
类型 | 沟槽型场截止 |
集电极—发射极最大电压 VCEO | 1200 V |
Pd-功率耗散 | 197 W |
集电极电流Ic | 25 A |
集电极—射极饱和电压 | 1200V |
封装 | ACEPACK2 |
安装方式 | Press Fit |
栅极阈值电压-VGE(th) | 20 V |
工作温度范围 | - 40 C~+ 150 C |
栅极/发射极最大电压 | 20 V |
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