SCT50N120
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Specification
Qg-栅极电荷 | 122 nC |
Vds-漏源极击穿电压 | 1.2 kV |
安装方式 | Through Hole |
Pd-功率耗散 | 318 W |
封装 | HiP-247-3 |
Id-连续漏极电流 | 65 A |
工作温度范围 | - 55 C~+ 200 C |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 25 V |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 52 mOhms |
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