NTD6415ANLT4G
In stock
- NTD6415ANLT4G Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Qg-栅极电荷 | 35 nC |
Vgs - 栅极-源极电压 | 20 V |
Pd-功率耗散 | 83 W |
工作温度范围 | - 55 C~+ 175 C |
Rds On-漏源导通电阻 | 44 mOhms |
封装 | TO-252-3 |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 23 A |
Vds-漏源极击穿电压 | 100 V |
电路数量 | 1 Channel |
Others include "NTD6415ANLT4G" parts
The following parts include 'NTD6415ANLT4G'
NTD6415ANLT4G Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
NTD6415ANLT4G
ON
Trans MOSFET N-CH 100V 23A 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
NTD6415ANLT4G
ON
Learn More >
-
- View All Newest Products from Omron