STD11NM65N
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Specification
晶体管极性 | MOSFET |
Pd-功率耗散 | 110W(Tc) |
Id-连续漏极电流 | 11 A |
Vds-漏源极击穿电压 | 650 V |
电路数量 | 1 Channel |
工作温度范围 | 150°C(TJ) |
封装 | TO-252-3 |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 425 mOhms |
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