STD2N62K3
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Specification
Vds-漏源极击穿电压 | 620 V |
Qg-栅极电荷 | 15 nC |
Rds On-漏源导通电阻 | 3.6 Ohms |
工作温度范围 | - 55 C~+ 150 C |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
Id-连续漏极电流 | 2.2 A |
封装 | TO-252-3 |
Pd-功率耗散 | 45 W |
Vgs - 栅极-源极电压 | 30 V |
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