STP110N8F7
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Specification
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
Vgs - 栅极-源极电压 | 20 V |
Pd-功率耗散 | 170 W |
安装方式 | Through Hole |
Id-连续漏极电流 | 80 A |
工作温度范围 | - 55 C~+ 175 C |
Vds-漏源极击穿电压 | 80 V |
Rds On-漏源导通电阻 | 7.5 mOhms |
Qg-栅极电荷 | 46.8 nC |
封装 | TO-220-3 |
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