TPS1100D
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Specification
Vds-漏源极击穿电压 | 15 V |
安装方式 | SMD/SMT |
工作温度范围 | - 40 C~+ 85 C |
高度 | 1.75 mm |
Id-连续漏极电流 | 1.6 A |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 15 V |
封装 | SOIC-8 |
长度 | 4.9 mm |
宽度 | 3.9 mm |
Rds On-漏源导通电阻 | 180 mOhms |
电路数量 | 1 Channel |
Pd-功率耗散 | 791 mW |
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