TPS1100DR
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Specification
高度 | 1.75 mm |
Id-连续漏极电流 | 1.6 A |
Rds On-漏源导通电阻 | 400 mOhms |
Vgs - 栅极-源极电压 | 2 V, - 15 V |
电路数量 | 1 Channel |
长度 | 4.9 mm |
Vds-漏源极击穿电压 | 15 V |
封装 | SOIC-8 |
宽度 | 3.9 mm |
晶体管极性 | PMOS Switches |
安装方式 | SMD/SMT |
Pd-功率耗散 | 791 mW |
工作温度范围 | - 40 C~+ 125 C |
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