TPS1100D
In stock
- TPS1100D Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Vds-漏源极击穿电压 | 15 V |
Id-连续漏极电流 | 1.6 A |
封装 | SOIC-8 |
长度 | 4.9 mm |
宽度 | 3.9 mm |
Rds On-漏源导通电阻 | 180 mOhms |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 15 V |
Pd-功率耗散 | 791 mW |
安装方式 | SMD/SMT |
工作温度范围 | - 40 C~+ 85 C |
高度 | 1.75 mm |
电路数量 | 1 Channel |
Others include "TPS1100D" parts
The following parts include 'TPS1100D'
TPS1100D Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
TPS1100DR
TI
TPS1100 单路 P 通道增强-模式 MOSFET
Learn More >
-
-
-
TPS1100DR
TI
TPS1100 单路 P 通道增强-模式 MOSFET
Learn More >
-
-
-
TPS1100DR
TI
TPS1100 单路 P 通道增强-模式 MOSFET
Learn More >
-
-
-
TPS1100D
TI
Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube
Learn More >
-
-
-
TPS1100PW
TI
表面贴装型 P 通道 15V 1.27A(Ta) 504mW(Ta) 8-TSSOP
Learn More >
-
-
-
TPS1100PWR
TI
MOSFET P-CH 15V 1.27A 8-TSSOP
Learn More >
-
-
-
TPS1100PWR
TI
MOSFET P-CH 15V 1.27A 8-TSSOP
Learn More >
-
- View All Newest Products from Omron